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Thermal Solution of High Power LED
1. Application:
Diamond PCB takes advantage of the outstanding thermal conductivity and the electrical resistance of diamond or diamond-like carbon (DLC) thin film to integrate an insulation layer with high power device. Such insulation layer beneath the circuit could rapidly dissipate heat generated by high power semiconductor chips like light emitting diode (LED). Accordingly, the operation temperature of chips remains in an optimum.
　
2. Materials Characteristics:
The characteristics of diamond dielectric
Properties
Thermal conductivity (W/mK) ~475
Thermal radiation ~0.088 W/cm2
@70℃
Electrical Resistance (Ohm) >10(10)
Coefficient of thermal expansion (ppm/ ℃) 7~9
Thermal stability (oC) ~400
Chemical stability No reaction with acids, alkalis, or solvents
 
3. Structure of diamond PCB:
 
4. Temperature distribution of an IC-substrate level package:
Lower Temperature and Excellent thermal uniformity(Good thermal spreading)
 
Chip level package
Lower Temperature& Excellent temperature uniformity
 
5. Performance Data:
Characteristic Test conditions Performance
Thermal resistance Rth (℃/W) Power: 5~26 W 0.2~1.0 ℃/W (depend on thermal management)
Life time test Power: 3W 2000 hrs without any decay
High temperature test 370 ℃ for 2 min. There was not any delaminating between diamond dielectric layer, conductive layer, soldering pad and substrate.
Thermal conductivity (W/mK) KINIK Test DLC dielectric: 475; Total thermal conductivity of DLC PCB: same as Al substrate
Adhesion (initial) 0.33 cm2 pad, 5 mm�� wire, Pulling speed: 25 mm/min., vertical pull >30 kgf/cm2
Thermal cycle (+) 100 ℃ (30 min.)
to (5 min.)
(-)40 ℃ (30 min.) 		300 cycles
Thermal Sh℃k (+) 100 ℃ (30 min.)
to (10 sec)
(-)10 ℃ (30 min.) 		300 cycles
Low temperature life test Temperature: -40℃
IF: 350 mA 		1000 hrs
The insulating test at high temperature 180 ℃ DC 500V 1000 hrs
RoHS Test Report No.: CE/2008/30602 SGS Approved
 
6. Specifications:
Maximum operation voltage >DC 2000V (depend on the thickness of diamond dielectric)
Maximum operation temperature ~ 300℃
Thermal impedance Same as Aluminum substrate
Suggested Line Width >=0.2 mm
onductor thickness ~30 um
Conductor Resistivity 0.00375 ohms/sq./mil thickness
Maximum substrate size 365 mm x 300 mm x 3mm
Minimum substrate thickness 0.6 mm
 
 
Customer Service：kinik_rd@kinik.com.tw